Author Affiliations
Abstract
1 Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101804, China
3 School of Physics Science and Technology, Xinjiang University, Urumqi 830046, China
4 School of New Energy and Electronics, Yancheng Teachers University, Yancheng 224002, China
5 Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Ex situ characterization techniques in molecular beam epitaxy (MBE) have inherent limitations, such as being prone to sample contamination and unstable surfaces during sample transfer from the MBE chamber. In recent years, the need for improved accuracy and reliability in measurement has driven the increasing adoption of in situ characterization techniques. These techniques, such as reflection high-energy electron diffraction, scanning tunneling microscopy, and X-ray photoelectron spectroscopy, allow direct observation of film growth processes in real time without exposing the sample to air, hence offering insights into the growth mechanisms of epitaxial films with controlled properties. By combining multiple in situ characterization techniques with MBE, researchers can better understand film growth processes, realizing novel materials with customized properties and extensive applications. This review aims to overview the benefits and achievements of in situ characterization techniques in MBE and their applications for material science research. In addition, through further analysis of these techniques regarding their challenges and potential solutions, particularly highlighting the assistance of machine learning to correlate in situ characterization with other material information, we hope to provide a guideline for future efforts in the development of novel monitoring and control schemes for MBE growth processes with improved material properties.
epitaxial growth thin film in situ characterization molecular beam epitaxy (MBE) 
Journal of Semiconductors
2024, 45(3): 031301
Sizhe Xing 1,2Junwen Zhang 1,2,*Wangwei Shen 1,2An Yan 1,2[ ... ]Nan Chi 1,2
Author Affiliations
Abstract
1 Key Laboratory of EMW Information (MoE), Fudan University, Shanghai 200433, China
2 Department of Communication Science and Engineering, Shanghai ERC of LEO Satellite Communication and Applications, Shanghai CIC of LEO Satellite Communication Technology, Fudan University, Shanghai 200433, China
3 Department of Electronic Engineering, Jinan University, Guangzhou 510632, China
4 School of Information and Electronics, Beijing Institute of Technology, Beijing 100081, China
Increasing bandwidth requirements have posed significant challenges for traditional access networks. It is difficult for intensity modulation/direct detection to meet the power budget and flexibility requirements of the next-generation passive optical network (PON) at 100G and beyond considering the new requirements. This is driving researchers to develop novel optical access technologies. Low-cost, wide-coverage, and high-flexibility coherent PON is emerging as a strong contender in the competition. In this article, we will review technologies that reduce the complexity of coherent PON (CPON), enabling it to meet the commercial requirements. Also, advanced algorithms and architectures that can enhance system coverage and flexibility are also discussed.
access network coherent optics flexible data rate low complexity wide dynamic range 
Chinese Optics Letters
2024, 22(4): 040604
Author Affiliations
Abstract
1 Key Laboratory for Information Science of Electromagnetic Waves (MoE), Department of Communication Science and Engineering, Fudan University, Shanghai 200433, China
2 National Institute of LED on Silicon Substrate, Nanchang University, Nanchang 330096, China
In recent studies, visible light communication (VLC) has been predicted to be a prospective technique in the future 6G communication systems. To suit the trend of exponentially growing connectivity, researchers have intensively studied techniques that enable multiple access (MA) in VLC systems, such as the MIMO system based on LED devices to support potential applications in the Internet of Things (IoT) or edge computing in the next-generation access network. However, their transmission rate is limited due to the intrinsic bandwidth of LED. Unfortunately, the majority of visible light laser communication (VLLC) research with beyond 10 Gb/s data rates concentrates on point-to-point links, or using discrete photodetector (PD) devices instead of an integrated array PD. In this paper, we demonstrated an integrated PD array device fabricated with a Si-substrated GaN/InGaN multiple-quantum-well (MQW) structure, which has a 4×4 array of 50 μm×50 μm micro-PD units with a common cathode and anode. This single-integrated array successfully provides access for two different transmitters simultaneously in the experiment, implementing a 2×2 MIMO-VLLC link at 405 nm. The highest data rate achieved is 13.2 Gb/s, and the corresponding net data rate (NDR) achieved is 12.27 Gb/s after deducing the FEC overhead, using 2.2 GHz bandwidth and superposed PAM signals. Furthermore, we assess the Huffman-coded coding scheme, which brings a fine-grain adjustment in access capacity and enhances the overall data throughput when the user signal power varies drastically due to distance, weather, or other challenges in the channel condition. As far as we know, this is the first demonstration of multiple visible light laser source access based on a single integrated GaN/InGaN receiver module.
Photonics Research
2024, 12(4): 793
Author Affiliations
Abstract
1 Jinan University, College of Physics and Optical Engineering, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Guangzhou, China
2 Jinan University, College of Physics and Optical Engineering, Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Guangzhou, China
3 Zhengzhou University, School of Physics and Microelectronics, Key Laboratory of Materials Physics of Ministry of Education, Zhengzhou, China
4 Jinan University, Key Laboratory of Optoelectronic Information and Sensing Technologies of Guangdong Higher Education Institutes, Guangzhou, China
5 Jianghan University, School of Optoelectronic Materials and Technology, Key Laboratory of Optoelectronic Chemical Materials and Devices of Ministry of Education, Wuhan, China
Despite the rapid advances of red and green perovskite light-emitting diodes (PeLEDs), achieving high brightness with high external quantum efficiency (EQE) remains a challenge for the pure-blue PeLEDs, which greatly hinders their practical applications, such as white-light illumination and in optical communication as a high-speed and low-loss light source. Herein, we report a high-performance pure-blue PeLED based on mixed-halide quasi-2D perovskites incorporated with a zwitterionic molecule of 3-(benzyldimethylammonio) propanesulfonate (3-BAS). Experimental and density functional theory analysis reveals that 3-BAS can simultaneously eliminate non-radiative recombination loss, suppress halide migration, and regulate phase distribution for smoothing energy transfer in the mixed-halide quasi-2D perovskites, leading to the final perovskites with high photoluminescence quantum yield and robust spectrum stability. Thus, the high-performance pure-blue PeLED with a recorded brightness with 1806 cd m - 2 and a relative higher EQE of 9.25% is achieved, which is successfully demonstrated in a visible light communication system for voice signal transmission. We pave the way for achieving highly efficient pure-blue PeLEDs with great application potential in future optical communication networks.
pure-blue PeLEDs quasi-2D perovskite zwitterionic additive visible light communication 
Advanced Photonics
2024, 6(2): 026002
Author Affiliations
Abstract
1 Key Laboratory for Information Science of Electromagnetic Waves (MoE), Fudan University, Shanghai 200433, China
2 Peng Cheng Laboratory, Shenzhen 518038, China
In this Letter, we propose and experimentally demonstrate a lens-free wavefront shaping method that utilizes synchronized signal block beam alignment and a genetic algorithm (SSBGA) for a diffuse non-line-of-sight (NLOS) visible light communication (VLC) system. The proposed method effectively controls the position and mobility of visible light beams by partitioning spatial light modulator pixels and manipulating beams to converge at distinct spatial positions, thereby enhancing wavefront shaping efficiency, which achieves a significant 23.9 dB optical power enhancement at +2 mm offset, surpassing the lens-based continuous sequence (CS) scheme by 21.7 dB. At +40° angle, the improvement reaches up to 11.8 dB and 16.8 dB compared to the results with and without lens-based CS, respectively. A maximum rate of 5.16 Gbps is successfully achieved using bit-power loading discrete multi-tone (DMT) modulation and the proposed SSBGA in an NLOS VLC system, which outperforms the lens-based CS by 1.07 Gbps and obtains a power saving of 55.6% during the transmission at 4 Gbps. To the best of our knowledge, this is the first time that high-speed communication has been realized in an NLOS VLC system without a lens.
non-line-of-sight, lens-free wavefront shaping visible light communication 
Chinese Optics Letters
2024, 22(2): 020603
Author Affiliations
Abstract
Although the 5G wireless network has made significant advances, it is not enough to accommodate the rapidly rising requirement for broader bandwidth in post-5G and 6G eras. As a result, emerging technologies in higher frequencies including visible light communication (VLC), are becoming a hot topic. In particular, LED-based VLC is foreseen as a key enabler for achieving data rates at the Tb/s level in indoor scenarios using multi-color LED arrays with wavelength division multiplexing (WDM) technology. This paper proposes an optimized multi-color LED array chip for high-speed VLC systems. Its long-wavelength GaN-based LED units are remarkably enhanced by V-pit structure in their efficiency, especially in the “yellow gap” region, and it achieves significant improvement in data rate compared with earlier research. This work investigates the V-pit structure and tries to provide insight by introducing a new equivalent circuit model, which provides an explanation of the simulation and experiment results. In the final test using a laboratory communication system, the data rates of eight channels from short to long wavelength are 3.91 Gb/s, 3.77 Gb/s, 3.67 Gb/s, 4.40 Gb/s, 3.78 Gb/s, 3.18 Gb/s, 4.31 Gb/s, and 4.35 Gb/s (31.38 Gb/s in total), with advanced digital signal processing (DSP) techniques including digital equalization technique and bit-power loading discrete multitone (DMT) modulation format.
GaN-based LED LED array VLC V-pit sidewall quantum well high-frequency response 
Opto-Electronic Science
2023, 2(5): 230005
Author Affiliations
Abstract
1 Key Laboratory for Information Science of Electromagnetic Waves (MoE), Department of Communication Science and Engineering, Fudan University, Shanghai 200433, China
2 Research Center of Low-Earth-Orbit Satellite Communication and Applications, Shanghai 200433, China
We propose an encryption technique for underwater visible light communication (UVLC) based on chaotic phase scrambling (PS) and conjugate frequency hopping (CFH). The technique is experimentally tested using an 8-level pulse amplitude modulation (PAM-8) and a 1.2 m underwater link. The security key of the phase scrambling code is generated according to a logistic map, and the frequency hopping is achieved by adding the same zero frequency points to the signal spectrum. The maximum transmission rate of 2.1 Gbit/s is measured with bit-error-rate (BER) below 7% the hard-decision forward error correction (HD-FEC) threshold of 3.8×10-3.
underwater visible light communication pulse amplitude modulation phase scrambling logistic mapping conjugate frequency hopping 
Chinese Optics Letters
2023, 21(6): 060602
Jianyang Shi 1,2,3Zengyi Xu 1Wenqing Niu 1Dong Li 1[ ... ]Nan Chi 1,2,3,8,*
Author Affiliations
Abstract
1 Key Laboratory for Information Science of Electromagnetic Waves (MoE), Fudan University, Shanghai 200433, China
2 Shanghai Engineering Research Center of Low-Earth-Orbit Satellite Communication and Applications, Shanghai 200433, China
3 Shanghai Collaborative Innovation Center of Low-Earth-Orbit Satellite Communication Technology, Shanghai 200433, China
4 National Institute of LED on Silicon Substrate, Nanchang University, Nanchang 330096, China
5 Peng Cheng Laboratory, Shenzhen 518055, China
6 e-mail:
7 e-mail:
8 e-mail:
Visible light communication (VLC) has emerged as a promising communication method in 6G. However, the development of receiving devices is much slower than that of transmitting devices, limited by materials, structures, and fabrication. In this paper, we propose and fabricate an InGaN/GaN multiple-quantum-well-based vertical-structure micro-LED-based photodetector (μPD) on a Si substrate. A comprehensive comparison of the photoelectrical performance and communication performance of three sizes of μPDs, 10, 50, and 100 μm, is presented. The peak responsivity of all three μPDs is achieved at 400 nm, while the passband full-widths at half maxima are 87, 72, and 78 nm for 10, 50, and 100 μm μPDs, respectively. The -20 dB cutoff bandwidth is up to 822 MHz for 50 μm μPD. A data rate of 10.14 Gbps is experimentally demonstrated by bit and power loading discrete multitone modulation and the proposed digital pre-equalizer algorithm over 1 m free space utilizing the self-designed 4×4 50 μm μPD array as a receiver and a 450 nm laser diode as a transmitter. This is the first time a more than 10 Gbps VLC system has been achieved utilizing a GaN-based micro-PD, to the best of our knowledge. The investigation fully demonstrates the superiority of Si substrates and vertical structures in InGaN/GaN μPDs and shows its great potential for high-speed VLC links beyond 10 Gbps.
Photonics Research
2022, 10(10): 2394
Author Affiliations
Abstract
1 Key Laboratory for Information Science of Electromagnetic Waves (MoE), Fudan University, Shanghai 200433, People’s Republic of China
2 National Institute of LED on Silicon Substrate, Nanchang University, Nanchang 330096, People’s Republic of China
3 State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200241, People’s Republic of China
4 State Key Laboratory of Optical Communication Technologies and Networks, China Information Communication Technologies Group Corporation, Wuhan 430000, People’s Republic of China
5 Peng Cheng Laboratory, Shenzhen, 518055, China
High-speed visible light communication (VLC), as a cutting-edge supplementary solution in 6G to traditional radio-frequency communication, is expected to address the tension between continuously increased demand of capacity and currently limited supply of radio-frequency spectrum resource. The main driver behind the high-speed VLC is the presence of light emitting diode (LED) which not only offers energy-efficient lighting, but also provides a cost-efficient alternative to the VLC transmitter with superior modulation potential. Particularly, the InGaN/GaN LED grown on Si substrate is a promising VLC transmitter to simultaneously realize effective communication and illumination by virtue of beyond 10-Gbps communication capacity and Watt-level output optical power. In previous parameter optimization of Si-substrate LED, the superlattice interlayer (SL), especially its period number, is reported to be the key factor to improve the lighting performance by enhancing the wall-plug efficiency, but few efforts were made to investigate the influence of SLs on VLC performance. Therefore, to optimize the VLC performance of Si-substrate LEDs, we for the first time investigated the impact of the SL period number on VLC system through experiments and theoretical derivation. The results show that more SL period number is related to higher signal-to-noise ratio (SNR) via improving the wall-plug efficiency. In addition, by using Levin-Campello bit and power loading technology, we achieved a record-breaking data rate of 3.37 Gbps over 1.2-m free-space VLC link under given optimal SL period number, which, to the best of our knowledge, is the highest data rate for a Si-substrate LED-based VLC system.
PhotoniX
2021, 2(1): 16
Author Affiliations
Abstract
1 Key Laboratory for Information Science of Electromagnetic Waves (MoE), Fudan University, Shanghai 200433, China
2 Photonics Labora-tory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
Visible-light communication (VLC) stands as a promising component of the future communication network by providing high-capacity, low-latency, and high-security wireless communication. Superluminescent diode (SLD) is proposed as a new light emitter in the VLC system due to its properties of droop-free emission, high optical power density, and low speckle-noise. In this paper, we analyze a VLC system based on SLD, demonstrating effective implementation of carrierless amplitude and phase modulation (CAP). We create a low-complexity memory-polynomial-aided neural network (MPANN) to replace the traditional finite impulse response (FIR) post-equalization filters of CAP, leading to significant mitigation of the linear and nonlinear distortion of the VLC channel. The MPANN shows a gain in Q factor of up to 2.7 dB higher than other equalizers, and more than four times lower complexity than a standard deep neural network (DNN), hence, the proposed MPANN opens a pathway for the next generation of robust and efficient neural network equalizers in VLC. We experimentally demonstrate a proof-of-concept 2.95-Gbit/s transmission using MPANN-aided CAP with 16-quadrature amplitude modulation (16-QAM) through a 30-cm channel based on the 442-nm blue SLD emitter.
superluminescent diode visible-light communication neural network 
Opto-Electronic Advances
2020, 3(8): 08200009

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